Applied Materials, Inc.

Wen H Zhu

Li-Qun Xia

Tzu-Fang Huang

Ellie Y Yieh

Yan Ye

Hichem M'Saad

Yunsang Kim

Gerardo Delgadino

Xiaoye Zhao

Sohyun Park

Neungho Shin

Fang Tian

Joey Chiu

Alexandros T Demos

Ping Xu

Lihua Li

Louis Yang

Lihua Li Huang

A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Oxide-like seasoning for dielectric low k films

According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

Multi step ebeam process for modifying dielectric materials

A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Method of forming a low-K dual damascene interconnect structure

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Method for depositing a low k dielectric film (K>3.5) for hard mask application

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Sunnyvale, CA, United States of America

Wen H Zhu