United Microelectronics Corp.

Wen-Fu Yu

Chih-Ning Wu

Wei-Tsun Shiau

Cheng-Kuen Chen

A method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process is disclosed, in which the gate electrode, a metal silicide layer, a spacer, a silicon nitride cap layer, and a dielectric layer have been formed. The method includes performing a chemical mechanical polishing process to polish the dielectric layer using the silicon nitride cap layer as a polishing stop layer to expose the silicon nitride cap layer over the gate electrode; removing the exposed silicon nitride cap layer to expose the metal silicide layer; and performing a first etching process to remove the metal silicide layer on the gate electrode.

Growing community of inventors

Hsin-Chu, Taiwan

Wen-Fu Yu