National Sun Yat-Sen University of Kaohsiung

Wen-Chung Chen

Ting-Chang Chang

Chih-Cheng Shih

Chih-Yang Lin

Po-Hsun Chen

Yu-Ching Tsao

Ming-Hui Wang

Pei-Yu Wu

Yu-Shan Lin

Chih-Cheng Yang

Chun-Chu Lin

Chuan-Wei Kuo

Yu-Lin Tsai

A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

Method for drying wafer at room temperature

A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Structure to increase breakdown voltage of high electron mobility transistor

A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400&#xb0; C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Method for bonding one component to another component

Growing community of inventors

Kaohsiung, Taiwan

Wen-Chung Chen