Industrial Technology Research Institute

Macronix International Co., Ltd.

Wen Chung Chang

Shun-Li Lin

Cheng Hua Lin

Ying Chieh Hung

Yun Chu Lin

Ching Yi Lee

Wen S Ko

Shi K Chen

A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Structure applied to a photolithographic process and method for fabricating a semiconductor device

A process for producing a rare earth magnet of magnetically improved performance wherein a specific titanate coupling agent is added in one step of the process to enhance the oxidation resistance of the raw materials during production and a special degassing step is incorporated to allow for the removal of the residual titanate coupling agent. The resultant rare earth magnet exhibits improved maximum magnetic energy product ((BH).sub.max) and magnetic coercive force (H.sub.c) as well as other magnetic properties. Rare earth magnet produced by the process is also disclosed.

Process for producing rare earth magnet

Growing community of inventors

Hsinchu, Taiwan

Wen Chung Chang