Silicon Integrated Systems Corporation

Wen-Chu Huang

Tzu-Kun Ku

A method of forming a metal-oxide semiconductor (MOS) transistor. A semiconductor substrate is provided. A polysilicon layer is then deposited on the semiconductor substrate. The polysilicon layer is selectively etched to form a gate electrode. A silicon oxide layer is grown on the top and the sidewall. Ions (or dopants) are doped into the semiconductor substrate to form a lightly doped region. Then, a nitride spacer is formed on the sidewall of the silicon oxide layer. Finally, ions are doped into the semiconductor substrate to form a heavily doped region to serve as a source/drain of the MOS transistor.

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Changhua Hsien, Taiwan

Wen-Chu Huang