Industrial Technology Research Institute

Wen-Ching Sun

Yi-Fan Chen

Sheng-Min Yu

Tzer-Shen Lin

Tai-Jui Wang

Shur-Fen Liu

Yan-Rung Lin

Jinn-Shing King

Pei-Wen Yen

Jeng-Yu Tsai

Chin-Ching Lin

Yu-Chun Chen

Jhy-Long Jeng

Hao-Hsiang Chiang

Pin-Guan Liao

Chi-Fan Chiang

Chia-Liang Sun

An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Image sensor and manufacturing method thereof

A polyimide copolymer represented by formula (I) or formula (II) is provided.  In formula (I) or formula (II), B is a cycloaliphatic group or aromatic group, A is an aromatic group, R is hydrogen or phenyl, and m and n are 20-50. The invention also provides a method for fabricating a patterned metal oxide layer.

Polyimide copolymers and method for fabricating patterned metal oxide layers

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Method for forming patterned doping regions

A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Passivation layer structure of semiconductor device and method for forming the same

According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

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Pingzhen, Taiwan

Wen-Ching Sun