Tatung Company

Tatung University

Tatung Company and Tatung University

Wen-Ching Shih

Jyi-Tsong Lo

Jian-Min Jeng

Wei-Lung Tasi

Hui-Min David Wang

Ming-Hung Tsai

Rui-Cheng Huang

A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.

Method of fabricating composite field emission source

A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Composite field emission source

A high frequency SAW device and the substrate thereof are disclosed. The disclosed high frequency SAW device does not need to use the conventional and expensive sapphire substrate as its substrate. Besides, the disclosed substrate for a high-frequency SAW device can replace the conventional sapphire substrate in the use of the substrate for a high frequency SAW device. The disclosed high frequency SAW device comprises: a substrate; a first buffering layer forming on the surface of the substrate; a second buffering layer forming on the surface of the first buffering layer; a piezoelectric layer forming on the surface of the second buffering layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface of or beneath the piezoelectric layer.

High frequency surface acoustic wave device and the substrate thereof

Disclosed is a method of fabricating carbon nanotubes and carbon nano particles, the method comprising: providing a plurality of carbon micro carriers on a silicon substrate; forming a plurality of carbon nano particles on the carbon micro carrier by a first gas; and reacting with a second gas to provide a plurality of carbon nanotubes. Thus the carbon nanotube can be formed without the use of a metal catalyst. The carbon nanotubes can easily separate from each other without the problem of non-uniformity, because the carbon micro carrier used is in a microscale size.

Method for fabricating carbon nanotubes and carbon nano particles

The present invention relates to a high frequency surface acoustic wave device, which may be manufactured by the same manufacturing equipment, and with the same material, as those required for manufacturing a low frequency surface acoustic wave device. The disclosed high frequency surface acoustic wave device comprises: a piezoelectric substrate; a high acoustic velocity layer formed on the surface of the piezoelectric substrate whose acoustic velocity of the surface acoustic wave is larger than 5000 m/sec; an input transducing part; and an output transducing part; wherein the input transducing part and the output transducing part are formed in pair on or below the surface of the high acoustic velocity layer. Besides, the high acoustic velocity layer is preferably made of aluminum oxide, and formed on the surface of the piezoelectric substrate by an electron-beam evaporation process. The thickness thereof is preferably between 2 &#x3bc;m and 20 &#x3bc;m.

Growing community of inventors

Taipei, Taiwan

Wen-Ching Shih