Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Chien Yu

Keng-Yu Chou

Chun-Hao Chuang

Wei-Chieh Chiang

Cheng Yu Huang

Chih-Kung Chang

Wen-Hau Wu

Chien-Hsien Tseng

Kazuaki Hashimoto

Ting-Cheng Chang

In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Wave guide filter for semiconductor imaging devices

Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

Reduced cross-talk in color and infrared image sensor

Growing community of inventors

Hsinchu, Taiwan

Wen-Chien Yu