Tekcore Co., Ltd.

Wen-Chieh Hsu

Jenn-Hwa Fu

Yu-Chuan Liu

Hung-Cheng Lin

Chia-Ming Lee

Tai-Chun Wang

Shih-Hung Lee

Liang-Jyi Yan

A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Method for self bonding epitaxy

The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Method for fabricating light emitting diode element

Light-emitting diode

Growing community of inventors

Taoyuan County, Taiwan

Wen-Chieh Hsu