Lam Research Corporation

Wen-Chiang Tu

Xuyen Pham

Ren Zhou

Win Chen

A system and method of delivering a liquid to a CMP polishing pad includes supplying the liquid to a nozzle, the nozzle being oriented toward a polishing surface of the CMP polishing pad. The liquid flows at a rate of less than or equal to about 100 cc per minute. A pressurized carrier gas is also supplied to the nozzle. The liquid is substantially evenly sprayed from the nozzle onto the CMP polishing pad.

System, method and apparatus for applying liquid to a CMP polishing pad

A method for etching contact openings into a polycide layer including a metal silicide layer and a polysilicon layer comprises providing a substrate that includes a polycide layer, forming a patterned photoresist mask, and etching with a series of plasmas. The etches include a silicide etch, a polycide etch including chlorine gas and nitrogen gas where the nitrogen flow rate is between 20% and about 30% of the sum of the nitrogen flow rate plus the chlorine flow rate, and a poly overetch. A polycide etch with a composition in the specified range will have a polycide selectivity greater than one.

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Fremont, CA, United States of America

Wen-Chiang Tu