Rutgers, The State University of New Jersey

Wen-Chiang Hong

Yicheng Lu

Yonghui Zhang

Chieh-Jen Ku

Xiaolong Du

Zengxia Mei

Kuang Sheng

Rui Li

Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 &#x3bc;A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Oxide-based flexible high voltage thin film transistor

Magnesium Zinc Oxide (MZO)&#x2014;based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.

Magnesium zinc oxide-based high voltage thin film transistor

Growing community of inventors

Piscataway, NJ, United States of America

Wen-Chiang Hong