Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Chi Tsai

Mei-Yun Wang

Chii-Ming M Wu

Chih-Wei Chang

Wei-Jung Lin

Ming-Ta Lei

Fang-Cheng Chen

Chia-Han Lai

Huang-Ming Chen

Hung-Chang Hsu

Yung-Chung Chen

Chun-Wen Nieh

A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

Semiconductor device and method for forming the same

Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.

Method for making a disilicide

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Hsin-Chu, Taiwan

Wen-Chi Tsai