Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Cheng Yang

Chung-En Kao

Victor Y Lu

Che-Hui Lee

Pradip Girdhar Chaudhari

Shau-Lin Shue

Hai-Ching Chen

Ming-Han Lee

Hsin-Yen Huang

Hsiang-Huan Lee

Tung-Ching Tseng

Ya-Ling Lee

Keng-Chu Lin

Shing-Chyang Pan

Chih-Tsung Lee

Keith Kuang-Kuo Koai

Chih-Cheng Wei

Chyi-tsong Ni

Surendra Babu Anantharaman

Wei Chin

Chin-Hsiang Lin

You-Hua Chou

Chyi-Tsong Ni

Yu-Young Wang

Bo-Hung Lin

Ming-Chih Tsai

Chen-Chia Chiang

Kuang-Kuo Koai

A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

Target measurement device and method for measuring a target

A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.

Analyzing method

An apparatus and method for physical vapor deposition includes a magnetron having a plurality of electromagnets disposed between a base and a magnetic conductive plate. The magnetron includes a plurality of individually controlled electromagnets between a base and an electromagnetic plate. The magnetron controls the polarity and strength of current supplied to the respective electromagnets to generate magnetic fields that confine electrons to areas near a target material within the deposition chamber.

Apparatus and method for physical vapor deposition

Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

Ultra high vacuum cryogenic pumping apparatus with nanostructure material

A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Method for forming semiconductor device structure with etch stop layer

A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Method of manufacturing a semiconductor device

Semiconductor device metallization systems and methods

Some embodiments relate to a method of manufacturing an integrated circuit device. In this method a dielectric layer is formed over a substrate. The dielectric layer comprises an opening arranged within the dielectric layer. A first cobalt liner is formed along bottom and sidewall surfaces of the opening. A barrier liner is formed on exposed surfaces of the first cobalt liner. A bulk cobalt layer is formed in the opening and over the barrier liner to fill a remaining space of the opening.

Cobalt interconnect techniques

The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.

Closed loop control for reliability

Growing community of inventors

Hsinchu, Taiwan

Wen-Cheng Yang