Chunghwa Picture Tubes, Ltd.

Wen-Cheng Lu

Chin-Tzu Kao

Ya-Ju Lu

Hsiang-Hsien Chung

Yang-Yu Yao

A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A patterned semiconductor layer is formed on the gate insulating layer. A source is formed on the patterned semiconductor layer. The peripheral portion of the source is oxidized to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer. A protective layer and hydrogen ions are formed, wherein the protective layer covers the oxide layer and the patterned semiconductor layer. The patterned semiconductor layer not covered by the oxide layer is doped with the hydrogen ions to form a drain. A TFT is also provided.

TFT with oxide layer on IGZO semiconductor active layer

A manufacturing method of a thin film transistor includes the following steps. A substrate is provided first. A semiconductor layer is then formed on the substrate. Next, a photoresist pattern including a middle portion and two peripheral portions is formed on the semiconductor layer. The middle portion is disposed between two peripheral portions, and the thickness of the middle portion is greater than each of the peripheral portions. Next, an etching process is performed on the semiconductor layer for forming a patterned semiconductor layer. A photoresist ashing process is then performed to remove at least the peripheral portions of the photoresist pattern to form a channel defining photoresist pattern and expose two portions of the patterned semiconductor layer. Next, the patterned semiconductor layer is treated to form a semiconductor portion and two conductor portions. The channel defining photoresist pattern is then removed.

Thin film transistor and manufacturing method thereof

Oxidizing the source and doping the drain of a thin-film transistor

A TFT substrate includes: a substrate; and a plurality of TFTs, wherein each of the TFTs comprises: a gate electrode, disposed on the substrate; a gate insulating layer, disposed on the substrate and covering the gate electrode; a metallic oxide active layer, disposed on the gate insulating layer; a metallic oxide protection layer, disposed on the metallic oxide active layer; an etching stop layer, disposed on the metallic oxide protection layer, wherein a first through hole and a second through hole penetrate through the etching stop layer and the metallic oxide protection layer; and a source electrode and a drain electrode, disposed in the first through hole and the second through hole respectively, and electrically connected to the metallic oxide active layer.

Thin film transistor substrate

A method for forming contact holes is applied in a transistor array substrate. The transistor array substrate includes first contact pads, second contact pads located over the first contact pads, a first insulation layer covering the first contact pads, and a second insulation layer covering the second contact pads. Firstly, a photoresist pattern layer having recesses and first openings is formed on the second insulation layer. The first openings expose the second insulation layer partially. Then, the first insulation layer and the second insulation layer inside the first openings are removed partially, to expose the first contact pads. Then, the thickness of the photoresist pattern layer is reduced, so that the recesses form a plurality of second openings which expose the second insulation layer partially. After that, a part of the second insulation layer which is located inside the second openings is removed, to expose the second contact pads.

Growing community of inventors

Taoyuan County, Taiwan

Wen-Cheng Lu