National Yang Ming Chiao Tung University

Kinik Company

Wen-Cheng Ke

Wei-Kuo Chen

Fwu-Yih Houng

Ming-Chih Lee

Wu-Ching Chou

Chia-Che Ho

Wen-Hsiung Chen

The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate.

Patterned opto-electrical substrate and method for manufacturing the same

Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.

Process for manufacturing self-assembled nanoparticles

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Taipei, Taiwan

Wen-Cheng Ke