Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Chaun Chiang

Chen-Jong Wang

Kuo-Chyuan Tzeng

Dennis Sinitsky

A random access memory cell and a method for fabrication thereof provide a field effect transistor device laterally adjoining a metal oxide semiconductor capacitor device, each formed within an active region of a semiconductor substrate. Within the random access memory cell and method: (1) a single fluorinated silicon oxide layer of a single thickness serves as both a gate dielectric layer within the field effect transistor device and a capacitor dielectric layer within the metal oxide semiconductor capacitor device; and (2) a channel region within the field effect transistor device has a different threshold voltage adjusting dopant concentration in comparison with a semiconductor plate region within the metal oxide semiconductor capacitor device. The random access memory cell is fabricated with enhanced performance.

Growing community of inventors

Hsin-Chu, Taiwan

Wen-Chaun Chiang