Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Wen-Chang Kuo

Chih-Mu Huang

I-Chih Chen

Ying-Hao Chen

Jung-Chi Jeng

Dun-Nian Yaung

Jen-Cheng Liu

Min-Feng Kao

Ru-Shang Hsiao

Gulbagh Singh

Chih-Ming Lee

Chi-Yen Lin

C C Liu

Sheng-Chau Chen

Sheng-Chan Li

Szu-Yao Wang

Ying-Lang Wang

Feng-Chi Hung

Chia-Fu Lin

Yao-Hsiung Chang

Chiang Kao

Kuo Hsiung Chen

Ho-Han Liu

Ti-Yen Yang

Jo-Chan Liu

Chi-Pin Wang

Yen-Ming Chen

Chien-Chung Huang

Hsin-Hui Lee

Kai-Ming Ching

Chao-Yuan Su

Shih-Han Huang

Li-Chih Chen

Yue-Ying Jian

Yi-Lin Huang

Ling-Sung Wang

Sheng-Liang Pan

Cheng-Yu Chu

Wen-Hsiang Tseng

Wen-Tung Hsu

Huei-Wen Yang

Feng-chi Hung

Tien-Der Chiang

Chun Yi Chen

Dan-Ru Wang

Jau-Lan Yeh

Kaou-Kuang Wang

Some embodiments relate to an image sensor. The image sensor includes a semiconductor substrate including a pixel region and a peripheral region. A backside isolation structure extends into a backside of the semiconductor substrate and laterally surrounds the pixel region. The backside isolation structure includes a metal core, and a dielectric liner separates the metal core from the semiconductor substrate. A conductive feature is disposed over a front side of the semiconductor substrate. A through substrate via extends from the backside of the semiconductor substrate through the peripheral region to contact the conductive feature. The through substrate via is laterally offset from the backside isolation structure. A conductive bridge is disposed beneath the backside of the semiconductor substrate and electrically couples the metal core of the backside isolation structure to the through substrate via.

Stacked structure for CMOS image sensors

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. The semiconductor device includes an isolation structure in the semiconductor substrate. The isolation structure surrounds an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate is across the active region and extends onto the isolation structure. The semiconductor device includes a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure.

Semiconductor device with gate

A method of making a semiconductor structure includes forming a first contact pad over an interconnect structure. The method further includes forming a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The method further includes depositing a first buffer layer over the interconnect structure, wherein the first buffer layer partially covers the second contact pad, and an edge of the second contact pad extends beyond the first buffer layer.

Method of making semiconductor structure including buffer layer

A method of operating a user device includes: receiving a command from a user to power on the user device; determining whether the user device is located within a restricted zone through accessing a key server located within the restricted zone by a first monitoring entity of the user device before an operating system of the user device is executed, wherein the key server is configured to store a key for encrypting or decrypting the user device; and granting access of the user to the user device by the first monitoring entity in response to determining the user device as being within the restricted zone through successfully accessing the key server.

System and device for data protection and method thereof

A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The conductive structures may bypass a front side of the image sensor. A bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.

CSI with controllable isolation structure and methods of manufacturing and using the same

Stacked structure for CMOS image sensors including through-substrate-via contacting negative bias circuit

The present disclosure relates to an image sensor having an image sensing element surrounded by a BDTI structure, and an associated method of formation. In some embodiments, a first image sensing element and a second image sensing element are arranged next to one another within an image sensing die. A pixel dielectric stack is disposed along a back of the image sensing die overlying the image sensing elements. The pixel dielectric stack includes a first high-k dielectric layer and a second high-k dielectric layer. The BDTI structure is disposed between the first image sensing element and the second image sensing element and extends from the back of the image sensor die to a position within the image sensor die. The BDTI structure includes a trench filling layer surrounded by an isolation dielectric stack. The pixel dielectric stack has a composition different from that of the isolation dielectric stack.

Backside structure for image sensor

A method of operating a user device includes: receiving a command from a user to power on the user device, wherein the user device includes information on a restricted zone associated with the user device; detecting, by a monitoring entity of the user device without involvement of any device external to the user device, whether the user device is located within the restricted zone in response to the user device being powered on and before an operating system of the user device is executed; and granting access of the user to the user device by the monitoring entity in response to detecting the user device as being within the restricted zone.

An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.

Image sensor and manufacturing method thereof

A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.

Image sensor

A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

Semiconductor structure including buffer layer

A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate. The method includes forming a gate over the semiconductor substrate. The method includes forming a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure, the support film conformally covers a first portion of a top surface and a second portion of a first sidewall of the gate, the top surface faces away from the semiconductor substrate, the support film and a topmost surface of the active region do not overlap with each other, and the topmost surface faces the gate. The method includes after forming the support film, forming lightly doped regions in the semiconductor substrate and at two opposite sides of the gate.

Method of forming semiconductor device with gate

A method of operating a user device includes: detecting whether the user device is located within a restricted zone by a monitoring entity of the user device; and limiting access to the user device by the monitoring entity in response to detecting the user device as being outside the restricted zone.

A method of designing a layout includes determining a first layout pattern, wherein the first layout pattern corresponds to a plurality of contact pads. The method further includes generating a second layout pattern. The method further includes checking whether an edge of the second layout pattern overlaps the first layout pattern. The method further includes adjusting the second layout pattern so that the edge of the second layout pattern overlaps the first layout pattern in response to a determination that the edge of the second layout pattern is separated from the first layout pattern.

Method of designing a layout, method of making a semiconductor structure and semiconductor structure

A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

Semiconductor device with post passivation structure

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Tainan, Taiwan

Wen-Chang Kuo