Advanced Micro Devices Corporation

Cutek Research, Inc.

Tactical Fabs, Inc.

Wen C Ko

Mammen Thomas

Chiu H Ting

William H Holtkamp

Richard L Bechtel

Kenneth J Lowery

Douglas L Peltzer

Peter Cho

Scott W Wang

William T Liggett

A processing chamber for depositing and/or removing material onto/from a semiconductor wafer when the wafer is subjected to an electrolyte and in an electric field, and in which a rotating anode is used to agitate and distribute the electrolyte. A hollow sleeve is utilized to form a containment chamber for holding the electrolyte. A wafer residing on a support is moved vertically upward to engage the sleeve to form an enclosing floor for the containment chamber. One electrode is disposed within the containment chamber while the opposite electrode is comprised of several electrodes distributed around the circumference of the wafer. The electrodes are also protected from the electrolyte when the support is raised and engaged to the sleeve. In one embodiment, the support and the sleeve are stationary during processing, while a rotating anode is used to agitate and distribute the electrolyte. With a stationary sleeve, fluid feed and evacuation lines can be coupled through the sleeve to access the containment chamber.

Rotating anode for a wafer processing chamber

An apparatus and method for customizing electrode contact placement on a semiconductor wafer while depositing and/or removing a material on a semiconductor wafer. The present invention is a adapter having at least one opening through which at least one electrode contacts the semiconductor wafer. The adapter may be designed to have multiple openings at specified locations on the adapter, thus allowing multiple electrode contacts with the semiconductor wafer at pre-specified locations. A conductive sheet may couple with the adapter to carry an electrical current from an electrical conductor to the electrode contacts placed within the openings of the adapter.

Apparatus and method utilizing an electrode adapter for customized

A processing chamber for depositing and/or removing material onto/from a semiconductor wafer when the wafer is subjected to an electrolyte and in an electric field. A hollow sleeve is utilized to form a containment chamber for holding the electrolyte. A wafer residing on a support is moved vertically upward to engage the sleeve to form an enclosing floor for the containment chamber. One electrode is disposed within the containment chamber while the opposite electrode is comprised of several electrodes distributed around the circumference of the wafer. The electrodes are also protected from the electrolyte when the support is raised and engaged to the sleeve. In one embodiment, the support and the sleeve are stationary during processing, while in another embodiment, both are rotated or oscillated during processing.

Process chamber and method for depositing and/or removing material on a

A point contact solar cell structure and method of manufacturing which provides metal contact from positive and negative bus bars to alternating n-wells and p-wells in a solar cell crystal. The solar cell spans two side-by-side metal bus bars. On the bottom surface of the cell crystal two side-by-side perforated metal layers contact wells of only one conductivity type. Holes in the perforated metal layers are located beneath wells of the opposite conductivity type. An insulated junction between the two perforated metal layers is located directly above the junction between the two side-by-side metal bus bars. Fingers from the perforated metal layer above one bus bar reach across and down to contact the opposite bus bar. Metal lines also reach from the bus bars up through the holes in the perforated contact layers and contact wells within the crystal. This way, all n-wells and p-wells have electrical contact to their respective bus bars. A preferred embodiment includes a passivation layer applied to top and sides of the solar cell after dicing thus providing an anti-reflection coating on the top surface and means for reducing recombination of electrons and holes at edges of the solar crystal back to the interior of the crystal for capture by a p-well or n-well. Benefits include increased cell efficiency, reduced number of masking steps in the manufacturing process as compared to other point contact structures, and improved thermal conductivity through the cell, resulting in lower manufacturing cost and longer cell life.

Solar cell and cell mount

An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to coupled the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell.

Method of forming emitter coupled logic bipolar memory cell using

An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to couple the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell.

Emitter coupled logic bipolar memory cell

An improved lateral polysilicon diode in an integrated circuit structure is disclosed. The diode is characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance permitting high current flow before being limited by saturation. The polysilicon diode comprises a polysilicon substrate having a first zone sufficiently doped to provide a first semiconductor type and a second zone sufficiently doped to provide a second semiconductor type whereby the junction between the two zones forms a diode. The lateral edges of the diode are treated to remove defects to thereby inhibit current leakage around the edges of the lateral diode to lower the reverse current leakage of the diode.

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San Jose, CA, United States of America

Wen C Ko