Infineon Technologies Ag

Nan Ya Technology Corporation

Wen-Bin Lin

Dirk Efferenn

Jens Bachmann

Chung-Hsin Lin

Uwe Kahler

Jens Hahn

Grit Bonsdorf

Lee Donohue

Ronald Gottzein

The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N); (b) a stabilization step in the presence of pure molecular nitrogen gas (N); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

Process for removing a residue from a metal structure on a semiconductor substrate

A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits

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Dresden, Germany

Wen-Bin Lin