United Microelectronics Corp.

Wen-An Loong

Ming-Tzong Yang

Hong-Tsz Pan

Shyi-Long Shy

Yueh-Lin Chou

Guey-Chi Guo

This invention describes the fabrication and use of a self-aligning phase shifting mask comprised of phase shifting material formed over a patterned layer of half-tone or partially transmitting material. The interaction of light passing through the phase shifting and partially transmitting areas of the mask, the phase shifting only areas of the mask, and the non phase shifting transparent areas of the mask provides greater image resolution and depth of focus tolerance than other lithography methods including other known phase shifting techniques.

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Hsin-Chu, Taiwan

Wen-An Loong