United Microelectronics Corp.

United Microelectroncis Corp.

Wen-An Liang

I-Ming Tseng

Chen-Ming Huang

Ching-Ling Lin

Yu-Ren Wang

Po-Jen Chuang

Chia-Ming Kuo

Fu-Jung Chuang

Guan-Wei Huang

Yuan-Yu Chung

Chun-Hsien Lin

Rai-Min Huang

Kuan-Hsien Li

A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.

Semiconductor device and method for fabricating the same

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate.

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a first gate structure and a second gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; transforming the first gate structure and the second gate structure into a first metal gate and a second metal gate; forming a hard mask on the first metal gate and the second metal gate; removing part of the hard mask, the second metal gate, and part of the fin-shaped structure to form a trench; and forming a dielectric layer into the trench to form a single diffusion break (SDB) structure.

A method of forming a semiconductor structure is disclosed. A fin structure is formed on a substrate and a trench is formed in the fin structure. The trench has a top corner, an upper portion having an upper sidewall and a lower portion having a lower sidewall. A first dielectric layer is then formed on the substrate and fills the lower portion of the trench. After that, a second dielectric layer is formed on the substrate and covers the top corner and the upper sidewall of the trench. The second dielectric layer also covers an upper surface of the first dielectric layer.

Semiconductor structure and method of forming the same

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to forma first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.

A method for fabricating a semiconductor structure includes forming a plurality of mandrels over a substrate, wherein the substrate comprises a semiconductor substrate as a base. Then, a first dielectric layer is formed to cover on a predetermined mandrel of the mandrels. A second dielectric layer is formed over the substrate to cover the mandrels. The mandrels are removed, wherein a remaining portion of the first dielectric layer and the second dielectric layer at a sidewall of the mandrels remains on the substrate. An anisotropic etching process is performed over the substrate until a top portion of the semiconductor substrate is etched to form a plurality of fins corresponding to the remaining portion of the first dielectric layer and the second dielectric layer.

Method for fabricating semiconductor device

A semiconductor structure and method of forming the same. The semiconductor structure includes a fin structure formed on a substrate and an isolation structure formed therein. The isolation structure includes a trench with a concave upper sidewall, a straight lower sidewall and a rounded top corner. A first dielectric layer fills a lower portion of the trench. A second dielectric layer covers a top surface of the first dielectric layer, the concave upper sidewall and the rounded top corner of the trench.

The present invention further provides a method for forming a semiconductor device, comprising: first, a substrate having a fin structure disposed thereon is provided, wherein the fin structure has a trench, next, a first liner in the trench is formed, a first insulating layer is formed on the first liner, afterwards, a shallow trench isolation is formed in the substrate and surrounding the fin structure, wherein a bottom surface of the shallow trench isolation is higher than a bottom surface of the first insulating layer, and a top surface of the shallow trench isolation is lower than a top surface of the first insulating layer, and a dummy gate structure is formed on the first insulating layer and disposed above the trench, wherein a bottom surface of the dummy gate structure and a top surface of the fin structure are on a same level.

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a first shallow trench isolation (STI) around the fin-shaped structure; dividing the fin-shaped structure into a first portion and a second portion; and forming a second STI between the first portion and the second portion.

A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

Method for forming fin structures for non-planar semiconductor device

A semiconductor device and a method of fabricating the same, the semiconductor device including a fin structure, a first liner, a first insulating layer and a dummy gate structure. The fin structure is disposed on a substrate, where the fin structure has a trench. The first liner disposed in the trench. The first insulating layer disposed on the first liner. The dummy gate structure is disposed on the first insulating layer and disposed above the trench, where a bottom surface of the dummy gate and a top surface of the fin structure are on a same level.

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Tainan, Taiwan

Wen-An Liang