Nanjing University

Hefei National Laboratory

Weizong Xu

Dong Zhou

Hai Lu

Fangfang Ren

Feng Zhou

Wenfeng Wang

Yu Rong

Can Zou

Hao Qu

Jiuzhou Zhao

Junfan Qian

Provided are a reset-type charge-sensitive amplifying circuit, and a method for amplifying and resetting a data signal. The reset-type charge-sensitive amplifying circuit includes a signal input buffer module, a signal output amplifying module, and a reset pulse signal generation module. The signal input buffer module is connected to the signal output amplifying module, a first terminal of the signal input buffer unit is electrically connected to a semiconductor radiation detector, and a second terminal of the signal input buffer unit is electrically connected to a voltage bias unit. The signal output amplifying module is connected to the reset pulse signal generation module. The reset pulse signal generation module includes a voltage comparison unit, a reset pulse width modulation unit, and a reset pulse amplifying unit.

Reset-type charge-sensitive amplifying circuit, and method for amplifying and resetting data signal

The present invention discloses an experimental apparatus and a test method for a pulse laser irradiation wide bandgap power device. The apparatus includes an optical path coupling system, a circuit test system, a temperature control system, and an interaction control system. According to the present invention, irradiation sensitive region locating, irradiation transient current tests, irradiation sensitive condition tests, and irradiation degradation tests for the wide bandgap power device are implemented, and advantages of convenience in experiments, simple operation, automated tests, comprehensive and accurate test results, and the like are achieved.

Pulse laser irradiation wide bandgap power device

The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a gallium nitride layer, a barrier layer, and a gate structure successively arranged from bottom to top. The gallium nitride layers on both sides of the barrier layer are respectively provided with a source electrode and a drain electrode on the top surface. The gate structure is located near the source electrode and includes a p-type gallium nitride layer, a dielectric layer, an Ohmic metal pillar, and a Schottky metal layer. The present invention solves the breakdown problem caused by the inability to release impact energy during the switching process by introducing an asymmetric multi-integrated gate structure.

GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof

A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-type gallium nitride layers, source ohmic metal layers, and drain ohmic metal layers. The P-type gallium nitride layers are connected to a gate interconnection metal layer via gate metal layers and metal lead wires. A gate top metal layer is provided on the gate interconnection metal layer. Each source ohmic metal layer is provided with a source interconnection metal layer and source top metal layers. Each drain ohmic metal layer is provided with a drain interconnection metal layer and drain top metal layers. The wide bandgap semiconductor part is connected to the metal plates through the source top metal layers, the drain top metal layers, and the gate top metal layer.

Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereof

The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.

GaN HEMT device for irradiation damage detection and detection and manufacturing method therefor

The present invention discloses an in-situ testing system for semiconductor device in aerospace irradiation environment. The present invention includes a static testing unit, a static testing channel, a dynamic testing unit, a dynamic testing channel, and a channel switching control unit; the static testing unit is connected to the device under test through the static testing channel, and is used to output static testing signals and display the static testing data of the device under test; the dynamic testing unit is connected to the device under test through the dynamic testing channel, and is used to output dynamic testing signals and display the dynamic testing data of the device under test; the channel switching control unit is connected to the static testing channel and the dynamic testing channel, respectively. This invention can achieve static, dynamic, and degradation testing of third-generation semiconductor device in aerospace irradiation environment.

In-situ testing system for semiconductor device in aerospace irradiation environment

The present invention discloses a novel silicon carbide-based lateral PN junction extreme ultraviolet detector with enhanced detection performance based on selective-area ion implantation, including an N-type ohmic contact lower electrode, an N-type substrate and a lightly-doped epitaxial layer which are connected sequentially from bottom to top, where the lightly-doped epitaxial layer is an N-type lightly-doped epitaxial layer or a P-type lightly-doped epitaxial layer; in a case that the lightly-doped epitaxial layer is an N-type or P-type lightly-doped epitaxial layer, a P-type or N-type well region is formed on the surface of the N-type or P-type lightly-doped epitaxial layer through the selective-area ion implantation, a P-type or N-type ohmic contact upper electrode is arranged on the P-type or N-type well region, and the P-type or N-type ohmic contact upper electrode is provided with a metal conductive electrode along its periphery.

Growing community of inventors

Nanjing, China

Weizong Xu