Chint Solar (zhejiang) Co., Ltd.

Weizhi Han

Hua Zhang

Minghua Wang

Yongmin Zhu

Junmei Rong

Jianbo Jin

Jinyan Hu

Lan Ding

Tao Feng

Xinwei Niu

Zhanwei Qiu

Cao Yu

Shiyong Liu

Liyou Yang

The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection. Therefore, the step of texturization is removed and the fabrication process simplified. As polycrystal silicon texturization is more challenging, the present invention is of more significance to heterojunction batteries using a polycrystal silicon wafer.

Method of fabricating heterojunction battery

Growing community of inventors

Hangzhou, China

Weizhi Han