Texas Instruments Corporation

Infineon Technologies Ag

Weize W Xiong

Cloves Rinn Cleavelin

Angelo Pinto

Rick L Wise

Andrew Marshall

Howard L Tigelaar

Craig Henry Huffman

Zhiqiang (Jeff) Wu

Thomas Schulz

Husam N Alshareef

Greg Charles Baldwin

Deborah J Riley

Manfred Ramin

Nirmal Chaudhary

Xin Wang

Jean-Pierre Colinge

An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orienations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0&#xb0; or 90&#xb0; rotations.

Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channels

An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0&#xb0; or 90&#xb0; rotations.

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

A silicon on insulator (SOI) multi-gate field effect transistor electrically Programmable Read-Only Memory (MuFET EPROM) includes a substrate having a dielectric surface. A first semiconducting region is in or on the dielectric surface. A source region, a drain region and a channel region interposed between the source and drain are formed in first semiconducting region. A gate dielectric layer is on the channel region. At least a second semiconducting region in or on the dielectric surface is spaced apart from the first semiconducting region. A first electrode layer comprises a first electrode portion including a transistor gate electrode and a control gate electrode electrically isolated from one another. The transistor gate overlies the channel region to form a transistor. The control gate extends to overlay a portion of the second semiconducting region. The transistor gate and thus the transistor and the control gate are capacitively coupled to one another by at least one MOS coupling capacitor, with one plate of the MOS coupling capacitor ohmically coupled to or including the second semiconducting region.

SOI MuGFETs having single gate electrode level

A process for forming an integrated circuit with reduced sidewall spacers to enable improved silicide formation between minimum spaced transistor gates. A process for forming an integrated circuit with reduced sidewall spacers by first forming sidewall spacer by etching a sidewall dielectric and stopping on an etch stop layer, implanting source and drain dopants self aligned to the sidewall spacers, followed by removing a portion of the sidewall dielectric and removing the etch stop layer self aligned to the reduced sidewall spacers prior to forming silicide.

Silicide method

An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having () crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having () crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0&#xb0; or 90&#xb0; rotations.

Various embodiments provide methods for fabricating dual supply voltage CMOS devices with a desired I/O transistor threshold voltage. The dual supply voltage CMOS devices can be fabricated in a semiconductor substrate that includes isolated regions for a logic NMOS transistor, a logic PMOS transistor, an I/O NMOS transistor, and an I/O PMOS transistor. Specifically, the fabrication can first set and/or adjust the threshold voltage (V) of each of the I/O NMOS transistor and the I/O PMOS transistor to a desired level. Logic NMOS and logic PMOS transistors can then be formed with I/O NMOS and I/O PMOS transistors masked without affecting the set/adjusted Vof the I/O transistors.

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A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0&#xb0; or 90&#xb0; rotations.

Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

An integrated process flow for forming an NMOS transistor () and an embedded SiGe (eSiGe) PMOS transistor () using a stress memorization technique (SMT) layer (). The SMT layer () is deposited over both the NMOS transistor () and PMOS transistor (). The portion of SMT layer () over PMOS transistor () is anisotropically etched to form spacers () without etching the portion of SMT layer () over NMOS transistor (). Spacers () are used to align the SiGe recess etch and growth to form SiGe source/drain regions (). The source/drain anneals are performed after etching the SMT layer () such that SMT layer () provides the desired stress to the NMOS transistor () without degrading PMOS transistor ().

Disposable spacer integration with stress memorization technique and silicon-germanium

One embodiment of the present invention relates to a memory cell. The memory cell includes a multi-gate field effect transistor associated with a first region of a semiconductor fin. The memory cell also includes a fin capacitor coupled to a drain of the multi-gate field effect transistor and associated with a second region of the semiconductor fin, where the fin capacitor has an approximately degenerate doping concentration in the second region. Other devices and methods are also disclosed.

Memory device with memory cell including MuGFET and FIN capacitor

A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation, a second crystal orientation, and a border region disposed between the first and second crystal orientations. The border region further has a defect associated with an interface of the first crystal orientation and second the second crystal orientation, wherein the defect generally extends a distance into the semiconductor body from a surface of the body. A sacrificial portion of the semiconductor body is removed from the surface thereof, wherein removing the sacrificial portion at least partially removes the defect. The sacrificial portion can be defined by oxidizing the surface at low temperature, wherein the oxidation at least partially consumes the defect. The sacrificial portion can also be removed by CMP. An STI feature may be further formed over the defect after removal of the sacrificial portion, therein consuming any remaining defect.

Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate

One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.

Multiple-gate MOSFET device and associated manufacturing methods

Different performance MOSFET Fully Depleted devices can be achieved on a single chip by varying the Vt through ion implantation. The integration of multiple Vt can be achieved through the selection of a metal gate stack with suitable effective WF for one semiconductor device to be included on a chip. Then, an ion implantation, with a dopant such as F, can be selectively performed to achieve proper Vt for other semiconductor devices on the chip.

Method of adjusting FDSOI threshold voltage through oxide charges generation in the buried oxide

A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0&#xb0; and 90&#xb0; to the PMOS fin and includes a second surface of a second crystal orientation.

Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate

Memory device with memory cell including MuGFET and fin capacitor

A semiconductor device comprises a first multi-gate device and a second multi-gate device on a semiconductor substrate. The first multi-gate device comprises a first gate structure and the second multi-gate device comprises a second gate structure. An effective width of the first gate structure is greater than an effective width of the second gate structure.

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Austin, TX, United States of America

Weize W Xiong