Pacific Light Technologies Corp.

Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Weiwen Zhao

Juanita N Kurtin

Michael Jansen

Kari N Haley

Benjamin Daniel Mangum

Nathan Evan Stott

Brian Theobald

Norbert Puetz

Nathan Mclaughlin

Matthew Bertram

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

Quantum dot (QD) polymer composites for on-chip light emitting diode (LED) applications

Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.

Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell

A semiconductor structure includes a quantum dot. A polymeric organic layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional organic layer and/or inorganic insulator layer encapsulates the coated quantum dot, wherein forming the one or more layers of organic material that encapsulates the coated quantum dot comprises forming a plurality of layers of polymers using a layer-by-layer deposition process.

Composition of, and method for forming, a semiconductor structure with polymer and insulator coatings

A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material, and at least one nanocrystalline shell comprising a second, different, semiconductor material that at least partially surrounds the nanocrystalline core. The nanocrystalline core and the nanocrystalline shell(s) form a quantum dot. An insulator layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional insulator layer encapsulates the coated quantum dot.

Composition of, and method for forming, a semiconductor structure with multiple insulator coatings

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

Quantum dots with multiple insulator coatings

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.

Network of semiconductor structures with fused insulator coating

Semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals and methods of fabricating semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals involve adding a silicon-containing silica precursor species to a solution of nanocrystals, subsequently forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species, and adding additional amounts of the silicon-containing silica precursor species after initial formation of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum.

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH), Sr(OH), Ba(OH), (Me)NOH, (Et)NOH, or (Bu)NOH.

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Happy Valley, OR, United States of America

Weiwen Zhao