Shenzhen Newsonic Technologies Co., Ltd.

Weiwei Hu

Jie Zou

Gongbin Tang

A bulk acoustic wave (BAW) resonator includes a piezoelectric layer, a first electrode layer disposed on a first side of the piezoelectric layer and including a first electrode and an additional electrode electrically isolated from each other, a second electrode layer disposed on a second side of the piezoelectric layer and including a second electrode, one or more conductive pads disposed on the second side of the piezoelectric layer and at least including an interconnection pad electrically connected to the second electrode and the additional electrode, a carrier structure disposed on the first side of the piezoelectric layer, a cover structure disposed on the second side of the piezoelectric layer and including a cover bonding layer and a cover substrate. A first cavity is disposed between the carrier structure and the piezoelectric layer. A second cavity is disposed between the cover structure and the piezoelectric layer.

Bulk acoustic wave resonator and method for manufacturing the same

A bulk acoustic wave (BAW) resonator includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, a cap wafer disposed above the piezoelectric layer, a top electrode disposed on the piezoelectric layer, a bottom electrode disposed below the piezoelectric layer, a first pad metal layer disposed on and electrically connected to the top electrode. a second pad metal layer disposed on and electrically connected to the bottom electrode, a top bonding layer disposed below the cap wafer, for bonding the cap wafer with the piezoelectric layer; and a bond contacting layer disposed between the top bonding layer and each one of the first pad metal layer and the second pad metal layer.

Bulk acoustic wave resonator and fabrication method thereof

A bulk acoustic wave resonator and method for manufacturing the same, the bulk acoustic wave resonator includes: a piezoelectric layer; a first electrode layer, a carrier structure, and first and second conductive connectors disposed on a first side of the piezoelectric layer, and a second electrode layer, an interconnection pad and a cover structure disposed on a second side of the piezoelectric layer, wherein the first electrode layer includes a first electrode and an additional electrode electrically isolated from each other; the second electrode layer includes a second electrode; the interconnection pad is electrically connected to the second electrode and the additional electrode; a first cavity is disposed between the carrier structure and the piezoelectric layer; the first conductive connector is electrically connected to the first electrode, the second conductive connector is electrically connected to the second electrode through the additional electrode and the interconnection pad.

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Weiwei Hu