Samsung Electronics Co., Ltd.

Weiwei Chen

Nae-in Lee

Hwa-Sung Rhee

Chang-Wook Moon

Joong S Jeon

Hyun-deok Yang

Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.

Germanium silicide layer including vanadium, platinum, and nickel

Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device

Growing community of inventors

Yongin-si, South Korea

Weiwei Chen