Asml Netherlands B.v.

Weitian Kou

Alexander Ypma

Hakki Ergün Cekli

Willem Seine Christian Roelofs

Marc Hauptmann

Michiel Kupers

Cédric Désiré Grouwstra

David Frans Simon Deckers

Franciscus Godefridus Casper Bijnen

Erik Johannes Maria Wallerbos

Stefan Cornelis Theodorus Van Der Sanden

Erik Henri Adriaan Delvigne

Manouk Rijpstra

Lydia Marianna Vergaij-Huizer

Manuel Giollo

Iryna Dovbush

Patricius Aloysius Jacobus Tinnemans

Edo Maria Hulsebos

Ralph Brinkhof

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Hadi Yagubizade

Loek Johannes Petrus Verhees

Wendy Johanna Martina Van De Ven

Matthijs Cox

Ahmet Koray Erdamar

Tran Thanh Thuy Vu

Everhardus Cornelis Mos

Wim Tjibbo Tel

Boris Menchtchikov

Hyunwoo Yu

Sudharshanan Raghunathan

Min-Sub Han

Maaike Van't Westeinde

Richard Johannes Franciscus Van Haren

Roy Werkman

Sarathi Roy

Hermanus Adrianus Dillen

Marc Jurian Kea

Pieter Gerardus Jacobus Smorenberg

Cornelis Johannes Henricus Lambregts

Maaike Van T Westeinde

Chang-Wei Chen

Chi-Fei Nien

Hakki Ergun Cekli

A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

Method of wafer alignment using at resolution metrology on product features

A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Method and apparatus for optimization of lithographic process

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

Computational metrology based correction and control

In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.

Method and apparatus for controlling an industrial process using product grouping

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Methods of determining corrections for a patterning process

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

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Eindhoven, Netherlands

Weitian Kou