Denso Corporation

Weitao Cheng

Shigeki Takahashi

Masakiyo Sumitomo

A semiconductor device includes a diode provided with: a drift layer being a first conductivity type; a cathode region being provided in a back face side of the drift layer and being the first conductivity type; a second conductivity type region provided in a surface layer part of the drift layer; multiple trenches dividing the second conductivity type region into pieces by being provided deeper than the second conductivity type region, and configuring an anode region; a gate insulation film provided in a surface of the trench; a gate electrode provided in a surface of the gate insulation film; an upper electrode electrically connected with the anode region; and a lower electrode electrically connected with the cathode region. A width between the trenches is narrowest in the drift layer is defined as a mesa width. The mesa width is set to be equal to or greater than 0.3 &#x3bc;m.

Semiconductor device

A semiconductor device includes: an IGBT section including a vertical IGBT; and a diode section arranged along the IGBT section and including a diode. The diode section includes a hole injection reduction layer having a first conductivity type and arranged in an upper layer portion of a drift layer, extending to a depth deeper than an anode region constituted by a second conductivity type region in the diode section, having an impurity concentration lower than an impurity concentration of the anode region and higher than an impurity concentration of the drift layer.

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Kariya, Japan

Weitao Cheng