Plessey Semiconductors Limited

WeiSin Tan

Andrea Pinos

Samir Mezouari

Jun-Youn Kim

A light emitting diode structure comprising: a p-type region; an n-type region; a light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a via passing through the light emitting region, wherein the via defines the perimeter of a light emitting surface of at least one pixel and comprises a material configured to enable injection of carriers into the p-type region or the n-type region, wherein one of the p-type region and n-type region is configured such that carriers generated in the one of the p-type region and the n-type region diffuses through the other one of the n-type region and the p-type region prior to recombination in the light emitting region.

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Plymouth, United Kingdom

WeiSin Tan