Xiamen Sanan Optoelectronics Technology Co., Ltd.

Weiping Xiong

Duxiang Wang

Chun-Yi Wu

Chaoyu Wu

Shu-Fan Yang

Jingfeng Bi

Guijiang Lin

Liangjun Wang

Minghui Song

Zhidong Lin

Meijia Yang

Jianqing Liu

Jie Ding

Zhihao Wu

Zhimin Wu

Charles Siuhuen Leung

Wencui Xu

A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n&#x3e; 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n&#x3c;n1.

Flip-chip light emitting diode chip and fabrication method

A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.

A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell () with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell () with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer () with a third band gap bigger than the second band gap on the second subcell, forming a third subcell () with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell () with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.

Four-junction quaternary compound solar cell and method thereof

A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiOmask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiOmask pattern; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a semiconductor material layer sequence of the inverted solar cell over the buffer layer with epitaxial growth; (6) bonding the semiconductor material layer sequence of the inverted solar cell with a supporting substrate; (7) selectively etching the SiOmask layer by wet etching; and (8) selectively etching the sacrificial layer by wet etching to lift off the growth substrate.

Fabrication method of inverted solar cells

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Xiamen, China

Weiping Xiong