Asml Netherlands B.v.

Hermes Microvision Inc.

Weiming Ren

Xuedong Liu

Zhongwei Chen

Xuerang Hu

Zhong-wei Chen

Shuai Li

Jack Jau

Juying Dou

Joe Wang

Qingpo Xi

Yongxin Wang

Kenichi Kanai

Xiaoli Guo

Xinan Luo

Xiaoyu Ji

Xiaoxue Chen

Weimin Zhou

Wei Fang

Feng Cao

Zhonghua Dong

Youfei Jiang

Qian Zhang

Frank Nan Zhang

Martinus Gerardus Johannes Maria Maassen

Zong-wei Chen

Wei He

Yan Ren

Yixiang Wang

Chiyan Kuan

Chung-Shih Pan

Peter Paul Hempenius

Yi-Xiang Wang

Xu Zhang

Yi Xiang Wang

Fumin He

Martinus Gerardus Maria Johannes Maassen

Shahedul Hoque

Shichen Gu

Heng Li

Zongyao Li

Shuhao Liu

Zizhou Gong

Zongwei Chen

Chen Zhongwei

Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

Systems and methods for signal electron detection

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device.

Systems and methods for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus

Systems and methods of mitigating Coulomb effect in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam along a primary optical axis, a first aperture array comprising a first plurality of apertures having shapes and configured to generate a plurality of primary beamlets derived from the primary charged-particle beam, a condenser lens comprising a plane adjustable along the primary optical axis, and a second aperture array comprising a second plurality of apertures configured to generate probing beamlets corresponding to the plurality of beamlets, wherein each of the plurality of probing beamlets comprises a portion of charged particles of a corresponding primary beamlet based on at least a position of the plane of the condenser lens and a characteristic of the second aperture array.

Multiple charged-particle beam apparatus and methods

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

Apparatus of plural charged-particle beams

Inspection systems and methods are disclosed. An inspection system may include a first energy source configured to provide a first landing energy beam and a second energy source configured to provide a second landing energy beam. The inspection system may also include a beam controller configured to selectively deliver one of the first and second landing energy beams towards a same field of view, and to switch between delivery of the first and second landing energy beams according to a mode of operation of the inspection system.

Multiple landing energy scanning electron microscopy systems and methods

Systems and methods of reducing the Coulomb interaction effects in a charged particle beam apparatus are disclosed. The charged particle beam apparatus may comprise a charged particle source and a source conversion unit comprising an aperture-lens forming electrode plate configured to be at a first voltage, an aperture lens plate configured to be at a second voltage that is different from the first voltage for generating a first electric field, which enables the aperture-lens forming electrode plate and the aperture lens plate to form aperture lenses of an aperture lens array to respectively focus a plurality of beamlets of the charged particle beam, and an imaging lens configured to focus the plurality of beamlets on an image plane. The charged particle beam apparatus may comprise an objective lens configured to focus the plurality of beamlets onto a surface of the sample and form a plurality of probe spots thereon.

Multiple charged-particle beam apparatus and methods of operating the same using movable lenses

A multi-beam inspection apparatus including an adjustable beam separator is disclosed. The adjustable beam separator is configured to change a path of a secondary particle beam. The adjustable beam separator comprises a first Wien filter and a second Wien filter. Both Wien filters are aligned with a primary optical axis. The first Wien filter and the second Wien filter are independently controllable via a first excitation input and a second excitation input, respectively. The adjustable beam separator is configured move the effective bending point of the adjustable beam separator along the primary optical axis based on the first excitation input and the second excitation input.

System and method for alignment of secondary beams in multi-beam inspection apparatus

The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

Apparatus using multiple charged particle beams

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Apparatus using multiple beams of charged particles

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

Multiple charged-particle beam apparatus with low crosstalk

Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.

Systems and methods for voltage contrast defect detection

Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

Sample pre-charging methods and apparatuses for charged particle beam inspection

Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system comprising a beam-limit aperture plate having a surface substantially perpendicular to an optical axis, the beam-limit aperture plate comprising a first aperture at a first distance relative to the surface of the beam-limit aperture plate, and a second aperture at a second distance relative to the surface of the beam-limit aperture plate, the second distance being different from the first distance. The first aperture may be a part of a first set of apertures of the beam-limit aperture plate at the first distance, and the second aperture may be a part of a second set of apertures of the beam-limit aperture plate at the second distance.

Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

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San Jose, CA, United States of America

Weiming Ren