Zing Semiconductor Corporation

Weimin Shen

Hanyi Huang

Gang Wang

Yun Liu

Yan Zhao

Nan Zhang

Xianliang Deng

Youshu Lei

Wee Teck Tan

A semiconductor crystal growth method and device are provided. The method comprises: obtaining an initial position of a graphite crucible when used in a semiconductor crystal growth process for the first time; obtaining a current production batch of the graphite crucible which characterizes a number of times of growth processes performed by the graphite crucible so far; and loading polysilicon raw materials into a quartz crucible sleeved in the graphite crucible based on the current production batch, wherein a total weight of the materials is called a charging amount, and the charging amount is adjusted based on the current production batch to keep an initial position of a silicon melt liquid surface in the quartz crucible stable while keeping the initial position of the graphite crucible unchanged. The present invention ensures the stability of each parameter in the crystal pulling process, and enhances the crystal pulling speed and quality.

Semiconductor crystal growth method and device

The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation. Based on the variation of the ratio of the crucible lifting rate relative to the monocrystal lifting rate, the speeds of the lifting devices are adjusted to maintain the process lifting rate during the crystal growth without change. The process lifting rate is the lifting rate of the monocrystal ingot relative to the melt surface. The present invention can facilitate to produce the monocrystal with high quality.

Method and apparatus of monocrystal growth

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Semiconductor crystal growth apparatus

A seeding method for crystal growth comprising: a first seeding step: rotating a crucible with a first rotation speed to grow the crystal to a first length; a second seeding step: gradually increasing the rotation speed of the crucible from the first rotation speed to a second rotation speed, and growing the crystal to a second length; a third seeding step: rotating the crucible with the second rotation speed to growing the crystal to a predicted length. By separating the seeding stage to three steps and gradually increasing the rotation speed in the second step of the crucible, the silicon melt convection is enhanced and the temperature at center of the silicon melt is kept to be not lower than the starting temperature of the seeding. Thereby, the removal of dislocation within the seed crystal can be increased, and the growth problems such as broken or polycrystallization can be prevented.

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Shanghai, China

Weimin Shen