Entegris, Inc.

Advanced Technology Materials, Inc.

Shanghai Institute of Ic Materials

Weimin Li

Bryan Clark Hendrix

Chongying Xu

Jeffrey F Roeder

William Hunks

Philip S H Chen

David Walter Peters

Thomas M Cameron

Steven M Bilodeau

Carlo Waldfried

Richard A Cooke

I-Kuan Lin

Nilesh Gunda

Tianniu Chen

Jun-Fei Zheng

Scott L Battle

Matthias Stender

James Anthony O'Neill

Gregory T Stauf

Jorge A Lubguban

Jeffrey R Roeder

Susan V DiMeo

Woosung Jang

Dingkai Guo

Philip SH Chen

A system for processing a substrate and a method for processing a substrate are disclosed. The system for processing a substrate includes a processing chamber configured to receive the substrate, wherein the substrate is exposed to an etchant in the processing chamber to remove a portion of the substrate and generate access to the substrate. A by-product in the etching solution; and a by-product removing section configured to convert the by-product into a precipitate and remove the precipitate, thereby removing the by-product. The Etching solution is circulated back to the processing chamber after the by-product is removed.

Need for Si3N4 selective removal by wet chemistry

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Coatings for enhancement of properties and performance of substrate articles and apparatus

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

A high dielectric constant metal-insulator structure, including an electrode comprising NiOwherein 1&#x3c;x&#x2264;1.5, and a high k dielectric material in contact with the electrode. The structure may have a further electrode in contact with the high k dielectric material, to form a metal-insulator-metal (MIM) capacitor, e.g., including a bottom electrode comprising NiOwherein 1&#x3c;x&#x2264;1.5, a high k dielectric material overlying the bottom electrode, and a top electrode comprising NiOwherein 1&#x3c;x&#x2264;1.5. The NiOelectrodes in such applications are oxide-stable, high work function electrodes that avoid deterioration of work function and conductivity during electronic device fabrication involving elevated temperature annealing.

In-situ oxidized NiO as electrode surface for high k MIM device

A high dielectric constant (k&#x2265;40), low leakage current (&#x2264;10A/cmat 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

ALD processes for low leakage current and low equivalent oxide thickness BiTaO films

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO/SiOtrench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Precursors for silicon dioxide gap fill

A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Fluorine free tungsten ALD/CVD process

A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and Ris independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO, SiN, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50&#xb0; C. to 200&#xb0; C. 

Silylene compositions and methods of use thereof

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

In situ generation of RuO4 for ALD of Ru and Ru related materials

A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

Method and composition for depositing ruthenium with assistive metal species

A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.

High concentration nitrogen-containing germanium telluride based memory devices and processes of making

Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)}Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.

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New Milford, CT, United States of America

Weimin Li