Nissin Ion Equipment Co., Ltd.

Weijiang Zhao

Yuya Hirai

Takayuki Murayama

Yuta Iwanami

Takatoshi Yamashita

Shigeki Sakai

Tadashi Ikejiri

Masakazu Adachi

Kohei Tanaka

Suguru Itoi

Takashi Sakamoto

Shinsuke Inoue

Tomoya Taniguchi

Kazuki Tobikawa

Hideyuki Tanaka

Jian Wang

A hydrogen supply device disposed in a high-potential section includes a bottle internally provided with a hydrogen absorbing alloy.

Hydrogen supply device, and ion beam irradiation apparatus equipped therewith

A semiconductor manufacturing apparatus includes a wafer clamp including a mechanical clamp and an electrostatic chuck, and a controller that controls the wafer clamp to selective clamp a wafer using only the mechanical clamp based on a processing temperature of a wafer.

Wafer clamping method and semiconductor manufacturing apparatus

An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Ion implantation apparatus

An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

Ion source

A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.

Substrate holding device, semiconductor fabrication device, and substrate clamping ascertainment method

An analyzing electromagnet constituting an ion implanter has a first inner coil, a second inner coil, three first outer coils, three second outer coils, and a yoke. The inner coils are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face.

Growing community of inventors

Kyoto, Japan

Weijiang Zhao