Intel Corporation

Weihua Tang

Chandra Mohan Jha

Pooya Tadayon

Robert L Sankman

Xavier Francois Brun

Zhimin Wan

Aastha Uppal

Shrenik Kothari

Je-Young Chang

Feras Eid

Chia-Pin Chiu

Joe F Walczyk

Shankar Devasenathipathy

Kelly P Lofgreen

Marco Aurelio Cartas Ayala

Omkar G Karhade

Ravindranath Vithal Mahajan

Nitin A Deshpande

Sanka Ganesan

Ram S Viswanath

Mitul Bharat Modi

Edvin Cetegen

Paul J Diglio

Yiqun Bai

Rajen S Sidhu

Martha A Dudek

Krishna Vasanth Valavala

Akhilesh P Rallabandi

Kumar Abhishek Singh

Jan Krajniak

Arun Kumar C Nallani

Minseok Ha

Hongjin Jiang

Javed Shaikh

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

Hybrid backside thermal structures for enhanced ic packages

Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Semiconductor device stack-up with bulk substrate material to mitigate hot spots

Embodiments disclosed herein comprise a die and methods of forming a die. In an embodiment, a die comprises, a die substrate, wherein the die substrate has a first thermal conductivity, and a first layer over the die substrate, wherein the first layer has a second thermal conductivity that is greater than the first thermal conductivity. In an embodiment, the die further comprises a second layer over the first layer, wherein the second layer comprises transistors.

Thermally enhanced silicon back end layers for improved thermal performance

Hybrid backside thermal structures for enhanced IC packages

Embodiments include a microelectronic device package structure having a first die on the substrate. One or more additional dice are on the first die, and a thermal electric cooler (TEC) is on the first die adjacent at least one of the one or more additional dice. A dummy die is on the TEC, wherein the dummy die is thermally coupled to the first die.

Package architecture including thermoelectric cooler structures

An Integrated Circuit (IC) assembly, comprising an IC package coupled to a substrate, and a subassembly comprising a thermal interface layer. The thermal interface layer comprises a phase change material (PCM) over the IC package. At least one thermoelectric cooling (TEC) apparatus is thermally coupled to the thermal interface layer.

Thermoelectric coolers combined with phase-change material in integrated circuit packages

An integrated circuit assembly may be formed using a phase change material as an electromagnetic shield and as a heat dissipation mechanism for the integrated circuit assembly. In one embodiment, the integrated circuit assembly may comprise an integrated circuit package including a first substrate having a first surface and an opposing second surface, and at least one integrated circuit device having a first surface and an opposing second surface, wherein the at least one integrated circuit device is electrically attached by the first surface thereof to the first surface of the first substrate; and a phase change material formed on the integrated circuit package.

Phase change materials for electromagnetic interference shielding and heat dissipation in integrated circuit assemblies

An electronic device and associated methods are disclosed. In one example, the electronic device includes a plurality of dies, a logic die coupled to the plurality of dies, and a dummy die thereon. In selected examples, the dummy die is located between the logic die and the plurality of silicon dies. In selected examples, the dummy die is attached to the logic die.

Thermal spreading management of 3D stacked integrated circuits

An apparatus is provided which comprises: a package substrate, an integrated circuit device coupled to a surface of the package substrate, a first material on the surface of the package substrate, the first material contacting one or more lateral sides of the integrated circuit device, the first material extending at least to a surface of the integrated circuit device opposite the package substrate, two or more separate fins over a surface of the integrated circuit device, the two or more fins comprising a second material having a different composition than the first material, and a third material having a different composition than the second material, the third material over the surface of the integrated circuit device and between the two or more fins. Other embodiments are also disclosed and claimed.

Coupled cooling fins in ultra-small systems

An integrated heat spreader includes channel structures assembled in a frame. Each channel structure is independent of the other, and can be used to dissipate heat from integrated circuitry at a specific location within a package, and without allowing heat from that particular location to propagate to integrated circuitry at other locations within the package. Each channel structure can be implemented with metal having a high thermal conductivity (e.g., copper). The channel structures can be used in conjunction with liquid-based cooling or air-based cooling. The frame can be implemented with low thermal conductivity molding compound or plastic so the heat transfer from one channel structure to another is inhibited. The channel structures can have different configurations (e.g., straight, pillars, and/or pin fins) to provide different rates of flow, mixing, and/or cooling. The flow direction of air or liquid for the channel structures can be the same (parallel) or different (counter).

Integrated heat spreader with multiple channels for multichip packages

Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.

Sloped metal features for cooling hotspots in stacked-die packages

Hybrid solder for solder balls and filled paste are described. A solder ball may be formed of a droplet of higher temperature solder and a coating of lower temperature solder. This may be used with a solder paste that has an adhesive and a filler of low temperature solder particles, the filler comprising less than 80 weight percent of the paste. The solder balls and paste may be used in soldering packages for microelectronic devices. A package may be formed by applying a solder paste to a bond pad of a substrate, attaching a hybrid solder ball to each pad using the paste, and attaching the package substrate to a microelectronic substrate by reflowing the hybrid solder balls to form a hybrid solder interconnect.

Hybrid solder and filled paste in microelectronic packaging

Growing community of inventors

Chandler, AZ, United States of America

Weihua Tang