Enkris Semiconductor, Inc.

Enkris Semiconductor (wuxi), Ltd.

Weihua Liu

Kai Cheng

A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an n-type semiconductor layer, a functional layer, a p-type semiconductor layer, a first AlN layer and a first heavily doped n-type semiconductor layer arranged in sequence. The first AlN layer is provided to reduce the diffusion of p-type ions from the p-type semiconductor layer into the first heavily doped n-type semiconductor layer, to avoid a thicker tunneling junction caused by n-type ions/p-type ions co-doping, to improve the tunneling effect of carriers, to enhance the uniformity of the current density distribution of the first heavily doped n-type semiconductor layer injected into the p-type semiconductor layer, to solve the problem that the p-type semiconductor layer has low carrier mobility and high resistivity.

Semiconductor structure and manufacturing method thereof

A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.

LED devices, LED structures and manufacturing methods thereof

A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, one or more grooves are formed by etching a first group-III-nitride epitaxial layer with a patterned first mask layer as a mask; then a second mask layer is formed at least on one or more bottom walls of the one or more grooves, and a first epitaxial growth is performed on the first group-III-nitride epitaxial layer to laterally grow and form a second group-III-nitride epitaxial layer with the second mask layer as a mask, where the one or more grooves are filled with the second group III-nitride epitaxial layer; a second epitaxial growth is then performed on the second group-III-nitride epitaxial layer to grow and form a third group-III-nitride epitaxial layer on the second group-III-nitride epitaxial layer and the patterned first mask layer.

Group III nitride structures and manufacturing methods thereof

The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes: a first conductivity semiconductor layer; a stress releasing layer disposed on the first conductivity semiconductor layer, and a material of the stress releasing layer is a III-V group semiconductor material; a V-shaped layer disposed on the stress releasing layer and having V-shaped grooves, where the V-shaped grooves are formed under a control of the stress releasing layer; a multi-quantum well layer, configured to conformally cover a surface of the V-shaped layer away from the stress releasing layer; a second conductivity semiconductor layer disposed on a side of the multi-quantum well layer away from the first conductivity semiconductor layer, where a conductivity type of the second conductivity semiconductor layer is different from that of the first conductivity semiconductor layer.

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Jiangsu, China

Weihua Liu