Xidian University

Weihang Zhang

Yue Hao

Jincheng Zhang

Kunlu Song

Yachao Zhang

Lu Hao

Junwei Liu

Zhihong Liu

Jiaqi Zhang

Guofang Yang

Yichang Wu

Shenglei Zhao

Chunfu Zhang

Dazheng Chen

Hong Zhou

A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

Material structure for low thermal resistance silicon-based gallium nitride microwave and millimeter-wave devices and manufacturing method thereof

A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Methods for preparing AlN based template having Si substrate and GaN based epitaxial structure having Si substrate

A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof

Growing community of inventors

Xi'an, China

Weihang Zhang