Tianjin Sanan Optoelectronics Co., Ltd.

Weifan Ke

Duxiang Wang

Yu-Ren Peng

Yuehua Jia

Huanshao Kuo

A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.

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TIANJIN, China

Weifan Ke