Chinese Academy of Sciences

Weida Hu

Wei Lu

Fang Wang

Xiaoshuang Chen

Peng Wang

Zhen Wang

Yunfeng Chen

Jinshui Miao

Runzhang Xie

Fuxing Dai

Ting He

Fang Zhong

The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

Infrared photodetector based on van der waals heterostructure and preparation method thereof

The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a BiOSe layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the BiOSe layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the BiOSe layer, and separately fabricating the metal source and the metal drain on the BiOSe layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.

Momentum-matching and band-alignment van der waals (vdW) infrared photodetector and fabrication method thereof

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Shanghai, China

Weida Hu