United Microelectronics Corp.

Weichi Ting

Tse-Wei Liu

Jumn-Min Fan

The present invention provides a method of fabricating capacitor dielectric layer. A bottom electrode covered by a native oxide layer on a chip is provided. The chip is disposed into a low pressure furnace. A mixture of dichlorosilane and ammonia is introduced into the low pressure furnace to form a nitride layer on the native oxide layer. In the same low pressure furnace, nitrogen monoxide or nitric oxygen is infused to form an oxynitride layer on the nitride layer.

Method of fabricating capacitor dielectric

A manufacturing method of a gate electrode is described. A plurality of undoped amorphous silicon layers and a plurality of doped amorphous silicon layers are alternately formed on a substrate.

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Kaohsiung, Taiwan

Weichi Ting