Guangdong Zhineng Technology Co., Ltd.

Weibin Chen

Zilan Li

Shuxin Zhang

The present disclosure provides a semiconductor device, a manufacturing method, and electronic equipment. The semiconductor device including: a substrate; an interface, for generating two-dimensional charge carrier gas; a first electrode and a second electrode; and a first semiconductor layer of a first type doping formed on the substrate, wherein first regions and a second region are formed in the first semiconductor layer, wherein in the first regions, the dopant atoms of the first type do not have electrical activity, and in the second region, the dopant atoms of the first type have electrical activity; and the second region includes a portion coplanar with the first regions.

Growing community of inventors

Guangzhou, China

Weibin Chen