Nan Ya Technology Corporation

Wei Zhong Li

Hsih-Yang Chiu

Hsih Yang Chiu

The present disclosure provides a device including a first conductive line and a second conductive line. The first conductive line includes a first segment that extends along a first direction and has a first side forming a first angle smaller than the right angle with the first direction. The second conductive line includes a first segment deviating from the first direction with the first angle. The first segment of the second conductive line is separated from the first side of the first segment of the first conductive line by a first distance greater than or equal to a first design rule distance.

Device and method of manufacturing the same

A semiconductor structure includes a substrate, an anti-fuse, first and second transistors, a contact structure, and a dielectric layer. The substrate includes a well region and first and second conductivity type doped regions in the well region, in which the second conductivity type doped region surrounds the first conductivity type doped region and includes a first portion and a second portion perpendicular to the first portion in a top view. The anti-fuse is in an anti-fuse region of the first conductivity type doped region. The first and second transistors are in the well region. The anti-fuse is disposed between the first and second transistors, and the anti-fuse is electrically connected to the first and second transistors. The contact structure is above the anti-fuse. The dielectric layer is between the contact structure and the anti-fuse region of the first conductivity type doped region.

Semiconductor structure

A semiconductor structure including a semiconductor substrate, an active area, a transistor gate, a fuse gate, a first dielectric pattern, a second dielectric pattern and a plurality of metal lines is provided. The active area is disposed in the semiconductor substrate. The transistor gate has a first line segment and a second line segment extending across the active area in a first direction. The fuse gate located between the first line segment and the second line segment extends across the active area in the first direction. The first dielectric pattern is disposed between the active area and the transistor gate. The second dielectric pattern is disposed between the active area and the fuse gate. The metal lines disposed on two opposite sides of the transistor gate are electrically connected to the active device.

Growing community of inventors

Taoyuan, Taiwan

Wei Zhong Li