Tsinghua University

Shenzhen China Star Optoelectronics Technology Co., Ltd.

South China Normal University

Kingfa Sci.&tech.co., Ltd.

Shenzhen Guohua Optoelectronics Co., Ltd.

Electric Power Research Institute of Guangdong Power Grid Co., Ltd.

Zhuhai Wango Chemical Co., Ltd.

Tianjin Kingfa New Material Co., Ltd.

Shenzhen Re-eat Catering Management Co., Ltd.

Wei Zhao

Xiangyang Xu

Hui Yang

Qinglai Guo

Hongbin Sun

Wenchuan Wu

Boming Zhang

Guofu Zhou

Xiangbin Zeng

Jian Jiao

Kai Xiong

Renxu Yuan

Kaijin Mai

Xueteng Dong

Yuke Zhong

Mingye Zhang

Zhilong Guo

Huaichang Ge

Meijun Tang

Laurens De Haan

Pei Zhang

Yongwang Zhang

Guoying Lin

Gnome statue

A preparation method for a temperature-responsive light reflecting coating is provided comprising: forming a main chain cholesteric phase liquid crystal polymer by a polymerization reaction between an acrylate liquid crystal and an amine, and coating the main chain cholesteric phase liquid crystal polymer on a substrate to form a light reflecting coating, wherein the acrylate comprises a chiral acrylate, and the reflection wavelength of the reflecting coating is determined by the content of the chiral acrylate liquid crystal and the polymerization degree of the main chain cholesteric phase liquid crystal polymer formed. The method may further comprise cross-linking the main chain cholesteric phase liquid crystal polymer to obtain a polymer network so as to form a solid coating. The present disclosure further provides a temperature-responsive light reflecting coating. The preparation of the main chain cholesteric phase liquid crystal polymer of the present disclosure requires only a simple thermally-driven polymerization reaction.

Preparation method for a temperature-responsive light reflecting coating and the light reflecting coating

The present invention discloses a PBAT resin composition comprising following components: (a) poly(butyleneadipate-co-terephthalate); (b) iron element; wherein, based on a total weight of the PBAT resin composition, a weight content of the iron element is 1 ppm-500 ppm. By adding iron-containing compounds into the composition and controlling the content of the iron element in a range of 1 ppm-500 ppm in the composition, a speed of reaction of aromatic structure in the PBAT resin under a hot and humid condition can be postponed, so that after the prepared PBAT resin composition is aged in boiling water for 24 hours and 48 hours, a variation of b-value is less than 2. The PBAT resin composition has obviously improved color stability in resistance to boiling water aging.

PBAT resin composition

Rack for dishes

A method and a device for controlling a local voltage are provided. The method includes: obtaining a first voltage value of a high-voltage side bus in a local transformer substation; determining a control strategy according to a starting threshold value for a voltage enhancement control, a starting threshold value for an under-voltage load shedding and the first voltage value of the high-voltage side bus; and performing the control strategy to control a charging power of an electric vehicle charging station corresponding to the local transformer substation, so as to control the local voltage of the local transformer substation.

Method and device for controlling local voltage

The present disclosure relates to a manufacturing method of array substrates, wherein a second masking process forming an active layer, a source electrode and a drain electrode further includes: forming a semiconductor thin-film layer, N+ doping thin-film layer, a metal thin-film layer, and a photo-resistor layer on a gate insulation layer in sequence; applying a gray-tone-mask process to expose and develop the photo-resistor layer to obtain a first photo-resistor mask; applying a first wet etching process and a first dry etching process to etch the metal thin-film layer, the semiconductor thin-film layer, and the N+ doping thin-film layer; applying a plasma ashing process to the first photo-resistor mask to obtain a second photo-resistor mask; applying a second wet etching process to etch the metal thin-film layer; and peeling off the second photo-resistor mask, applying a second dry etching process to etch the N+ doping thin-film layer. The present disclosure also relates to the array substrate formed by the above manufacturing method and the display device having the array substrate.

Array substrates and the manufacturing methods thereof, and display devices

Growing community of inventors

Guangdong, China

Wei Zhao