Sensors Unlimited

Other

Siemens Aktiengesellschaft

Nanonex Corporation

Princeton University

Siemens Medical Solutions Usa, Inc.

Janssen Biotech, Inc.

Queen's University at Kingston

Nanoopto Corporation

Zhang, Wei

Chou, Stephen Y.

Wei Zhang

Stephen Y Chou

Hua Tan

Wei Huang

Dorin Comaniciu

Lin Hu

Michael J Evans

Adrian Barbu

Douglas Stewart Malchow

Namwoong Paik

Simone Prummer

Paul L Bereznycky

Joshua Lund

Ying Zhu

Peter Durlak

Martin Ostermeier

John Liobe

Bogdan Georgescu

Joseph C Walsh

Gang Chen

Hartmuth C Kolb

Rhys Salter

Niraj K Jha

John M Keith

Stefan Böhm

Umesh B Gangadharmath

Dhanalakshmi Kasi

Vani P Mocharla

Eric Wang

Anna Katrin Szardenings

Shalom Goldberg

Tieming Zhao

Anjana Sinha

Fengbin Song

Li Shang

Changhui Liu

Chul Yu

Brad P Carrow

Ulrich Bill

Vadim Dudkin

Richard Socher

Terrence Chen

Shaohua Kevin Zhou

Greg E Blonder

Norbert Strobel

Jin-hyeong Park

Peng Wang

Xuegong Deng

Anguel N Nikolov

Adam K Galant

Shaolei Feng

Linshu Kong

He Gao

Benjamin J Sapp

Chandan K Reddy

Wang Wang

Sungjin Kim

De Hsin Chang

Sean T Houlihan

Macrocyclic chelators for chelation of alpha-emitting radiometal ions, such as actinium-225 are provided. Also provided are radiometal complexes containing an alpha-emitting radiometal ion bound to the macrocyclic chelator via coordinate bonding, and radioimmunoconjugates containing the radiometal complexes covalently linked to a targeting ligand, such as an antibody or antigen binding fragment thereof. The radioimmunoconjugates can be produced by click chemistry reactions. Methods of using the radiocomplexes and radioimmunoconjugates for selectively targeting neoplastic cells for radiotherapy and for treating neoplastic diseases and disorders are also described.

Macrocyclic chelators and methods of use thereof

Compounds for targeting and agents for imaging, prostate-specific membrane antigen (PSMA) are disclosed. Methods of synthesizing compounds and imaging agents, as well as methods for imaging PSMA are also disclosed. The imaging agents disclosed are suitable for PET and SPECT imaging.

PSMA imaging agents

A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.

Hybridization bumps for fine pitch sensor arrays

A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.

Visible-swir hyper spectral photodetectors with reduced dark current

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

Pin mesa diodes with over-current protection

A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.

Low capacitance photo detectors

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

Pin diodes with over-current protection

In one aspect, a chelating phosphine-phosphonic diamide (PPDA) ligand is described herein for constructing transition metal complexes operable for catalysis of olefin polymerization, including copolymerization of ethylene with polar monomer.

Transition metal catalysts for olefin polymerization

A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

Interconnect bump structures for photo detectors

A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.

Bump structures for high density flip chip interconnection

A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

Mesas and implants in two-dimensional arrays

Growing community of inventors

Plainsboro, NJ, United States of America

Wei Zhang