Epistar Corporation

Wei-Yu Yen

Schang-Jing Hon

Chun-Kai Wang

Min-Hsun Hsieh

Ming-Chi Hsu

Hsin-Ying Wang

Chien-Kai Chung

Hsin-Hsien Wu

Wei-Chih Peng

Yen-Chih Chen

Jui-Yi Chu

Yu-Pin Hsu

This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

Light emitting device

An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Optoelectronic device and method for manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Wei-Yu Yen