Epistar Corporation

Wei-Yo Chen

Yen-Wen Chen

Min-Hsun Hsieh

Chien-Yuan Wang

Shu-Ting Hsu

Tsung Xian Lee

Tzer-Perng Chen

Chao-Hsing Chen

Chien-Fu Shen

Tsun-Kai Ko

Chih-Chiang Lu

Schang-Jing Hon

Wei-Chih Peng

Shiau-Huei San

An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Optoelectronic semiconductor device

A light-emitting element includes: a light-emitting stack including an uneven upper surface; a transparent conductive layer formed on the uneven upper surface; an insulating layer formed on the transparent conductive layer and filling the uneven upper surface, and partial regions of the transparent conductive layer are exposed; a reflective layer formed on the transparent conductive layer and the insulating layer; and a contact interface including a current blocking area formed between the insulating layer and the reflective layer and a plurality of first contact regions formed between the transparent conductive layer and the reflective layer; and an electrode structure formed on the reflective layer, and the reflective layer is between the light-emitting stack and the electrode structure in a vertical direction of the light-emitting element; wherein the current blocking area and the plurality of first contact regions are coplanar.

Light-emitting element including a light-emitting stack with an uneven upper surface

An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

Optoelectronic device and method for manufacturing the same

The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Array-type light-emitting device and apparatus thereof

A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.

Light-emitting semiconductor apparatus

This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.

Growing community of inventors

Hsinchu, Taiwan

Wei-Yo Chen