Sematech, Inc.

Wei-Yip Loh

Kanghoon Jeon

Brian Coss

Prashant Majhi

Chanro Park

Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. The abrupt junction may be formed by placement of a dielectric layer or a dielectric layer and a semiconductor layer in a current path between the source and drain regions. The dielectric layer may be a low permittivity oxide such as silicon oxide, lanthanum oxide, zirconium oxide, or aluminum oxide.

Tunneling field-effect transistor with direct tunneling for enhanced tunneling current

Apparatuses, systems, and methods for tunneling MOSFETs (TFETs) using a self-aligned heterostructure source and isolated drain. TFETs that have an abrupt junction between source and drain regions have an increased probability of carrier direct tunneling (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction.

Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drain

A semiconductor structure may include a semiconductor bulk region with a gate stack on the semiconductor bulk region. The source region and the drain region in the semiconductor bulk region may be located on opposing sides of a channel region below the gate stack. An interfacial layer coupled to the channel region may modify a workfunction of a metal-semiconductor contact. In a MOSFET, the metal-semiconductor contact may be between a metal contact and the source region and the drain region. In a Schottky barrier-MOSFET, the metal-semiconductor contact may be between a silicide region in the source region and/or the drain region and the channel region. The interfacial layer may use a dielectric-dipole mitigated scheme and may include a conducting layer and a dielectric layer. The dielectric layer may include lanthanum oxide or aluminum oxide used to tune the workfunction of the metal-semiconductor contact.

Growing community of inventors

Austin, TX, United States of America

Wei-Yip Loh