Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Yi Hu

Jui-Feng Kuan

Chin-Sheng Chen

Yi-Kan Cheng

Tsun-Yu Yang

Chin-Cheng Kuo

Ching-Yu Chai

Tao Wen Chung

Chi-Yeh Yu

Ching-Shun Yang

Chih-Ming Chao

Wei Min Chan

Kmin Hsu

Kuo-Ji Chen

Wen-Ju Preet Yang

Hui Yu Lee

Hung-Ming Chen

Hsien-Hsin Sean Lee

Cheng-Hung Yeh

Ya-Chi Chou

You-Cheng Xiao

Yu-Ren Chen

Hung-Wen Huang

Jian-Yi Li

Chih Ming Yang

Jung-Chou Tsai

Chih Chi Hsiao

Po-Cheng Pan

Jill Liu

Abhishek Patyal

Kuang-Ming Wang

Shih-Hsuan Chien

A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Dummy cells placed adjacent functional blocks

Integrated circuits (IC) are provided. An IC includes a plurality of macros and a top channel. Each macro includes a macro boundary and a main pattern surrounded by the macro boundary. The top channel includes a plurality of first and second sub-channels. Each first sub-channel is arranged between a first macro and a second macro, and is formed by a plurality of first dummy boundary cells. Each second sub-channel is arranged between two of the second macros, and is formed by a plurality of second dummy boundary cells. The macro boundaries of the first macros are formed by the first dummy boundary cells, and the macro boundaries of the second macros are formed by the second dummy boundary cells. A first gate length of dummy patterns within the first dummy boundary cells is greater than a second gate length of dummy patterns within the second dummy boundary cells.

Integrated circuit with dummy boundary cells

Disclosed are methods for designing semiconductor devices, conductive layer patterns, and interconnection layer patterns including the operations of analyzing an initial semiconductor design layout to identify excessive open spaces between adjacent conductive elements or lines within an interconnection layer pattern, selecting or generating a dummy pattern to fill a portion of the open space, and generating a modified semiconductor design layout that incorporates the dummy pattern into first interconnection layer pattern to reduce the open space.

Track-based fill (TBF) method for metal patterning

A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

System, method and associated computer readable medium for designing integrated circuit with pre-layout RC information

Methods for inserting dummy boundary cells in an integrated circuit (IC) are provided. A plurality of macros and a top channel are merged into floorplan of the IC. The top channel is arranged between the macros and is filled with a plurality of first dummy boundary cells, and each of the macros includes a macro boundary and a main pattern surrounded by the macro boundary. The first dummy boundary cells within the top channel and between a first macro and a second macro are replaced with a plurality of second dummy boundary cells. The macro boundaries of the first and second macros are formed by the second dummy boundary cells. First gate length of dummy patterns within the first dummy boundary cells is greater than second gate length of dummy patterns within the second dummy boundary cells. The first and second dummy boundary cells are the same size.

Method of inserting dummy boundary cells for macro/IP and IC

A layout-generation method for an IC is provided. The layout-generation method includes accessing data of a schematic design of the IC; generating a hypergraph from the schematic design; transforming a plurality of constraints into a plurality of weighted edges in the hypergraph; continuing partitioning the hypergraph by the weighted edges until a plurality of multilevel groups are obtained to generate a layout; and verifying the layout to fabricate the IC.

Method for layout generation with constrained hypergraph partitioning

An integration circuit (IC) simulation method includes: (a) providing a design netlist of a system-level circuit, wherein the system-level circuit comprises a first sub-circuit; (b) providing a first behavior model that is determined based on an operation of the first sub-circuit, wherein the first behavior model is a function of one or more respective behavior-level parameters; (c) incorporating a first variation into each of the one or more behavior-level parameters of the first behavioral model; and (d) simulating the system-level circuit based on the one or more behavior-level parameters of the first behavior model that incorporates the first variation.

Variation-aware circuit simulation

A method is disclosed that includes performing a first simulation by applying first variations to identify at least one sample of an integrated circuit (IC), wherein the IC comprises at least one device; translating individual variables of split devices implementing the at least one device, to an equivalent variable for the split devices; and performing a second simulation, by applying at least a portion of second variations, with the equivalent variable for the split devices, to obtain a simulation result serving as a basis of modifying the layout for fabrication of the IC.

System and method for layout-related variation analysis

A method of modeling an integrated circuit comprises generating a schematic of an integrated circuit comprising a first circuit component. The schematic comprises a first representation of the first circuit component. The method also comprises replacing the first representation with a second representation of the first circuit component. The second representation includes resistive capacitance information (RC) for the first circuit component. The RC information is based on first RC data included in a process design kit (PDK) file and second RC data included in a macro device file. The second RC data is based on a relationship between the first circuit component and a second circuit component. The method further comprises selectively coloring the second representation of the first circuit component in the schematic based on the RC information. The coloring of the second representation is indicative of whether the integrated circuit is in compliance with a design specification.

Integrated circuit modeling method using resistive capacitance information

A method and a corresponding system for process variation analysis of an integrated circuit are provided. A netlist is generated describing electronic devices of an integrated circuit in terms of device parameters and process parameters. The process parameters include local process parameters individual to the electronic devices and global process parameters common to the electronic devices. Critical electronic devices are identified having device parameters with greatest contributions to a performance parameter of a design specification of the integrated circuit. Sensitivity values are determined for the global process parameters and local process parameters of the critical electronic devices. The sensitivity values represent how sensitive the one or more performance parameters are to variations in the global and local process parameters of the critical electronic devices. Monte Carlo (MC) samples are sorted based on the sensitivity values.

Method for process variation analysis of an integrated circuit

In some methods, a number of input data sets is provided for an integrated circuit (IC) model. A number of scores for the number of input data sets, respectively, are then determined based on probabilities of the respective input data sets resulting in a failure condition, which exists when the IC model fails to meet a predetermined yield criteria. A simulation order for the number of input data sets is then assigned according to the determined number of scores.

Method of failure analysis

A system for designing an integrated circuit includes at least one processor and at least one memory including computer program code for one or more programs. The at least one memory and the computer program code are configured to, with the at least one processor, cause the system to receive a proposed device array layout from a device array design module. The device array design module is configured to generate the proposed device array layout free from a set of system design rule constraints. The system is also caused to revise a schematic of the integrated circuit including the proposed device array layout. The system is further caused to determine whether the revised schematic violates one or more system design rule constraints.

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Zhubei, Taiwan

Wei-Yi Hu