Texas Instruments Corporation

Wei-Yan Shih

Steven Craig Bartling

Sudhanshu Khanna

Bradley Morgan Haskett

Michael Zwerg

Scott Robert Summerfelt

Krishnasawamy Nagaraj

Brian Roger Elies

Benjamin Stassen Cook

Juan Alejandro Herbsommer

Steven Alfred Kummerl

Matthew David Romig

Stuart M Jacobsen

Terry Lee Sculley

Willmar E Subido

Alok Kumar Lohia

Steve Kummerl

Seung Bae Lee

Mark Stephen Toth

Marie Denison

Gregory Eric Howard

James D Huffman

Kurt Peter Wachtler

Brian Goodlin

Kelly Jay Taylor

Lance W Barron

Gregory Allen North

Arthur M Wilson

Howard Raeburn Test

Juergen Luebbe

Henry William Neal

Michael A Mignardi

Brett A Mangrum

Keith J Brankner

Michael David McCormick

Mark F Reed

Xiaochen Xu

Braden Peter D'Andrea

Leah Trautmann

Thomas J Meyer

Paul Gerard Barker

A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

Wafer level packaging of MEMS

In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.

Piezo-electric sensor reset

A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.

Piezoelectric thin-film sensor and use thereof

An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.

Piezoelectric sensor apparatus

An improved differential sensor and corresponding apparatus implementing same. The differential sensor includes a substrate, an amplifier coupled to the substrate, and a plurality of highly-matched piezoelectric capacitors formed onto the substrate. A first set of the highly-matched piezoelectric capacitors are electrically coupled to a non-inverting input of the amplifier, and a second set of the highly-matched piezoelectric capacitors are electrically coupled to an inverting input of the amplifier to form an open loop differential amplifier.

Differential sensor using thin-film piezoelectric capacitors

A piezoelectric sensor with: (i) a capacitive element, comprising piezoelectric material; (ii) a pre-conditioning circuit, comprising circuitry for establishing a polarization of the capacitive element in a polarizing mode; and (iii) signal amplification circuitry for providing a piezoelectric-responsive output signal, in response to charge across the capacitive element in a sensing mode.

Piezoelectric sensing apparatus and method

An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element may include a conditioning circuit, temperature gauge, FRAM and a processor core.

Integrated force sensing element

Piezoelectric thin-film sensor

An ultrasonic transducer. The ultrasonic transducer has an interposer having electrical connectivity contacts. The ultrasonic transducer also has an ultrasonic receiver, comprising an array of receiving elements, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer. The ultrasonic transducer also has at least one ultrasonic transmitter, separate from the ultrasonic receiver, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer.

Extended range ultrasound transducer

A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.

Printed interconnects for semiconductor packages

Disclosed embodiments demonstrate batch processing methods for producing optical windows for microdevices. The windows protect the active elements of the microdevice from contaminants, while allowing light to pass into and out of the hermetically sealed microdevice package. Windows may be batch produced, reducing the cost of production, by fusing multiple metal frames to a single sheet of glass. In order to allow windows to be welded atop packages, disclosed embodiments keep a lip of metal without any glass after the metal frames are fused to the sheet of glass. Several techniques may accomplish this goal, including grinding grooves in the glass to provide a gap that prevents fusion of the glass to the metal frames along the outside edges in order to form a lip. The disclosed batch processing techniques may allow for more efficient window production, taking advantage of the economy of scale.

Low cost window production for hermetically sealed optical packages

Growing community of inventors

Plano, TX, United States of America

Wei-Yan Shih